Ku-Band AlGaN/GaN-HEMT with over 30% of PAE

被引：21
|
作者：
Takagi, Kazutaka [1 ]
Takatsuka, Shinji [1 ]
Kashiwabara, Yasushi [1 ]
Teramoto, Shinichiro [1 ]
Matsushita, Keiichi [1 ]
Sakurai, Hiroyuki [1 ]
Onodera, Ken [1 ]
Kawasaki, Hisao [1 ]
Takada, Yoshiharu [2 ]
Tsuda, Kunio [2 ]
机构：
[1] Toshiba Co Ltd, Microwave Solid State Engn Dept, Komukai Operat, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128581, Japan
[2] Toshiba Co Ltd, Corp R&D Ctr, Electron Devices Lab, Kawasaki, Kanagawa 2128581, Japan
来源：
2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 | 2009年
关键词：
AlGaN; GaN; HEMT; PAE; X-band; Ku-band;
D O I：
10.1109/MWSYM.2009.5165732
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AlGaN/GaN High E-Electron Mobility Transistors (HEMTs) were improved for X-band and Ku-band applications. The power added efficiency (PAE) was achieved over 40% for X-band and over 30% for Ku-band. The developed devices combined two AlGaN/GaN HEMTs of 12 mm gate periphery and exhibited the output power of over SOW. An AlGaN/GaN HEMT with four dies of 12 mm gate periphery was developed and exhibited the output power of over 120W.
引用
收藏
页码：457 / +
页数：2
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