Ku-Band AlGaN/GaN-HEMT with over 30% of PAE

被引：21

作者：

Takagi, Kazutaka ^{[1
]}

Takatsuka, Shinji ^{[1
]}

Kashiwabara, Yasushi ^{[1
]}

Teramoto, Shinichiro ^{[1
]}

Matsushita, Keiichi ^{[1
]}

Sakurai, Hiroyuki ^{[1
]}

Onodera, Ken ^{[1
]}

Kawasaki, Hisao ^{[1
]}

Takada, Yoshiharu ^{[2
]}

Tsuda, Kunio ^{[2
]}

机构：

[1] Toshiba Co Ltd, Microwave Solid State Engn Dept, Komukai Operat, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128581, Japan

[2] Toshiba Co Ltd, Corp R&D Ctr, Electron Devices Lab, Kawasaki, Kanagawa 2128581, Japan

来源：

2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 | 2009年

关键词：

AlGaN; GaN; HEMT; PAE; X-band; Ku-band;

D O I：

10.1109/MWSYM.2009.5165732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN High E-Electron Mobility Transistors (HEMTs) were improved for X-band and Ku-band applications. The power added efficiency (PAE) was achieved over 40% for X-band and over 30% for Ku-band. The developed devices combined two AlGaN/GaN HEMTs of 12 mm gate periphery and exhibited the output power of over SOW. An AlGaN/GaN HEMT with four dies of 12 mm gate periphery was developed and exhibited the output power of over 120W.

引用

页码：457 / +

页数：2

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