AlGaN/GaN HEMT with over 110 W Output Power for X-Band

被引：21

作者：

Zhong, ShiChang ^{[1
]}

Chen, Tangsheng ^{[1
]}

Ren, Chunjiang ^{[1
]}

Jiao, Gang ^{[1
]}

Chen, Chen ^{[1
]}

Shao, Kai ^{[1
]}

Yang, Naibin ^{[1
]}

机构：

[1] Natl Key Lab Monolith Integrated Circuits & Modul, POB 1601, Nanjing 210016, Peoples R China

来源：

2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2008年

关键词：

D O I：

10.1109/EMICC.2008.4772236

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN HEMT using field plate and recessed gate for X-band application was developed on SiC substrate. Internal matching circuits were designed to achieve high gain at 8GHz for the developed device with single chip and four chips combining, respectively. The internally matched 5.52mm single chip AlGaN/GaN HEMT exhibited 36.5W CW output power with a power added efficiency (PAE) of 40.1% and power density of 6.6W/mm at 35V drain bias voltage (Vds). The device with four chips combining demonstrated a CW over 100W across the band of 7.7-8.2GHz, and an maximum CW output power of 119.1W with PAE of 38.2% at Vds =31.5V. This is the highest output power for AlGaN/GaN HEMT operated at X-band to the best of our knowledge.

引用

页码：91 / +

页数：2

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