AlGaN/GaN HEMT Development Targeted for X-band Applications

被引：6
|
作者：
Wohlmuth, Walter [1 ]
Weng, Ming-Hung [1 ]
Lin, Che-Kai [1 ]
Du, Jhih-Han [1 ]
Ho, Shin-Yi [1 ]
Chou, Tung-Yao [1 ]
Li, Shuan-Ming [1 ]
Huang, Clement [1 ]
Wang, Wei-Chou [1 ]
Wang, Wen-Kai [1 ]
机构：
[1] WIN Semicond Corp, 35 Technol 7th Rd, Kuei Shan Hsiang 333, Tao Yuan Shien, Taiwan
来源：
2013 IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, COMMUNICATIONS, ANTENNAS AND ELECTRONICS SYSTEMS (IEEE COMCAS 2013) | 2013年
关键词：
AlGaN/GaN; T-gate; HEMT; Foundry;
D O I：
10.1109/COMCAS.2013.6685272
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses a newly developed 0.25. m GaN on SiC foundry process technology to support discrete and MMIC applications extending from L-through X-band. The GaN HEMT technology is based on high-throughput and low-cost i-line photolithographic tools and on large-diameter 100mm SiC substrates. The technology supports applications utilizing supply voltages up to 28V with power density of 4W/mm, PAE of 45%, and large signal linear gain of 15dB at 10GHz based on on-wafer measurements without harmonic terminations.
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页数：4
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