High-power monolithic AlGaN/GaN HEMT switch for X-band applications

被引：17
|
作者：
Ciccognani, W. [1 ]
De Dominicis, M. [2 ]
Ferrari, M. [1 ]
Limiti, E. [1 ]
Peroni, M. [3 ]
Romanini, P. [3 ]
机构：
[1] Univ Roma Tor Vergata, Dept Elect Engn, I-00131 Rome, Italy
[2] Elettron SpA, I-00131 Rome, Italy
[3] SELEX Sistemi Integrati, I-00131 Rome, Italy
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 15期
关键词：
D O I：
10.1049/el:20081170
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN technology Lire presented. Such switches have demonstrated state-of-the-art performance: they exhibit I dB on-state insertion loss and better than 37 dB isolation. power-handling measurements have shown that no compression phenomenon occurs with an input power equal to 39.5 dBm at 10 GHz.
引用
收藏
页码：911 / 913
页数：3
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