X-band 11 W AlGaN/GaN HEMT power MMICs

被引：0
|
作者：
Chen, Tangsheng [1 ]
Zhang, Bin
Jiao, Gang
Ren, Chunjiang
Chen, Chen
Shao, Kai
Yang, Naibin
机构：
[1] Natl Key Lab Monolith Integrated Circuits & Modul, POB 1601, Nanjing 210016, Peoples R China
来源：
2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2 | 2007年
关键词：
AlGaN/GaN; HEMT; MMICs; X-band; microstrip technology;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AlGaN/GaN HEMT power MMIC which is designed in microstrip technology on SI-SiC substrate is presented in this work. The chip size is only 2.0mmx1.1mmx0.08mm. The developed two-stage power MMIC operates at frequency between 9.4-10.6GHz and delivers a pulsed output power of 11.1W at 9.7GHz under a drain bias of 30V. The linear gain of the MMIC is about 10dB which is much lower than the simulated value of 15dB. Further optimization of the MMIC processing and circuit design is necessary to improve the performances of the MMIC.
引用
收藏
页码：438 / +
页数：2
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