AlGaN/GaN HEMT Development Targeted for X-band Applications

被引：6

作者：

Wohlmuth, Walter ^{[1
]}

Weng, Ming-Hung ^{[1
]}

Lin, Che-Kai ^{[1
]}

Du, Jhih-Han ^{[1
]}

Ho, Shin-Yi ^{[1
]}

Chou, Tung-Yao ^{[1
]}

Li, Shuan-Ming ^{[1
]}

Huang, Clement ^{[1
]}

Wang, Wei-Chou ^{[1
]}

Wang, Wen-Kai ^{[1
]}

机构：

[1] WIN Semicond Corp, 35 Technol 7th Rd, Kuei Shan Hsiang 333, Tao Yuan Shien, Taiwan

来源：

2013 IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, COMMUNICATIONS, ANTENNAS AND ELECTRONICS SYSTEMS (IEEE COMCAS 2013) | 2013年

关键词：

AlGaN/GaN; T-gate; HEMT; Foundry;

D O I：

10.1109/COMCAS.2013.6685272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses a newly developed 0.25. m GaN on SiC foundry process technology to support discrete and MMIC applications extending from L-through X-band. The GaN HEMT technology is based on high-throughput and low-cost i-line photolithographic tools and on large-diameter 100mm SiC substrates. The technology supports applications utilizing supply voltages up to 28V with power density of 4W/mm, PAE of 45%, and large signal linear gain of 15dB at 10GHz based on on-wafer measurements without harmonic terminations.

引用

页数：4

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