A Broadband and Transient-Accurate AlGaN/GaN HEMT SPICE Model for X-Band RF Applications

被引：0
|
作者：
Dangi, Raghvendra [1 ]
Pampori, Ahtisham [1 ]
Pal, Praveen [1 ]
Nazir, Mohammad Sajid [1 ]
Kushwaha, Pragya [2 ]
Chauhan, Yogesh Singh [1 ]
机构：
[1] The Department of Electrical Engineering, Indian Institute of Technology at Kanpur, Kanpur,208016, India
[2] The Centre for AIoT and Applications, Indian Institute of Technology, Rajasthan, Jodhpur,342037, India
来源：
IEEE Transactions on Electron Devices | 2024年 / 71卷 / 12期
关键词：
D O I：
10.1109/TED.2024.3487959
中图分类号：
学科分类号：
摘要：
34
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页码：7390 / 7397
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