AlGaN/GaN HEMT with over 110 W Output Power for X-Band

被引：21

作者：

Zhong, ShiChang ^{[1
]}

Chen, Tangsheng ^{[1
]}

Ren, Chunjiang ^{[1
]}

Jiao, Gang ^{[1
]}

Chen, Chen ^{[1
]}

Shao, Kai ^{[1
]}

Yang, Naibin ^{[1
]}

机构：

[1] Natl Key Lab Monolith Integrated Circuits & Modul, POB 1601, Nanjing 210016, Peoples R China

来源：

2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2008年

关键词：

D O I：

10.1109/EMICC.2008.4772236

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN HEMT using field plate and recessed gate for X-band application was developed on SiC substrate. Internal matching circuits were designed to achieve high gain at 8GHz for the developed device with single chip and four chips combining, respectively. The internally matched 5.52mm single chip AlGaN/GaN HEMT exhibited 36.5W CW output power with a power added efficiency (PAE) of 40.1% and power density of 6.6W/mm at 35V drain bias voltage (Vds). The device with four chips combining demonstrated a CW over 100W across the band of 7.7-8.2GHz, and an maximum CW output power of 119.1W with PAE of 38.2% at Vds =31.5V. This is the highest output power for AlGaN/GaN HEMT operated at X-band to the best of our knowledge.

引用

页码：91 / +

页数：2

共 50 条

[21] A Single-Ended Resistive X-Band AlGaN/GaN HEMT MMIC Mixer
Sudow, Mattias
Andersson, Kristoffer
Fagerlind, Martin
Thorsell, Mattias
Nilsson, Per-Ake
Rorsman, Niklas
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2008, 56 (10) : 2201 - 2206
[22] X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power
Wang, Quan
Wang, Xiaoliang
Xiao, Hongling
Wang, Cuimei
Jiang, Lijuan
Feng, Chun
Liu, Fengqi
Xu, Xiangang
Wang, Zhanguo
[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 18 (11) : 7451 - 7454
[23] X-band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling
Janssen, J. P. B.
van Heijningen, M.
Provenzano, G.
Visser, G. C.
Morvan, E.
van Vliet, F. E.
[J]. 2008 IEEE CSIC SYMPOSIUM, 2008, : 72 - +
[24] Packaged AlGaN/GaN HEMT Power Bars with 900W Output Power and High PAE at L-Band
Friesicke, C.
Maier, T.
Brueckner, P.
Quay, R.
Ambacher, O.
[J]. 2016 46TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2016, : 409 - 412
[25] X-band AlGaN/GaN HEMTs with high microwave power performance
PENG MingZeng
[J]. Science China(Physics,Mechanics & Astronomy), 2011, Mechanics & Astronomy)2011 (03) : 442 - 445
[26] X-band AlGaN/GaN HEMTs with high microwave power performance
Peng MingZeng
Zheng YingKui
Wei Ke
Chen XiaoJuan
Liu XinYu
[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2011, 54 (03) : 442 - 445
[27] X-band AlGaN/GaN HEMTs with high microwave power performance
MingZeng Peng
YingKui Zheng
Ke Wei
XiaoJuan Chen
XinYu Liu
[J]. Science China Physics, Mechanics and Astronomy, 2011, 54 : 442 - 445
[28] Novel Manufacturing Process of AlGaN/GaN HEMT for X-Band High-Power Application on Si (111) Substrate
Wang, Cong
Maharjan, Ram Krishna
Cho, Sung-Jin
Kim, Nam-Young
[J]. 2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012), 2012, : 484 - 486
[29] AlGaN/GaN power HEMT for Ka-band
Abolduyev, I. M.
Gladysheva, N. B.
Dorofeev, A. A.
Matveev, Yu A.
Minnebaev, V. M.
Tchernyavsky, A. A.
[J]. 2005 15th International Crimean Conference Microwave & Telecommunication Technology, Vols 1 and 2, Conference Proceedings, 2005, : 170 - 170
[30] AlGaN/GaN HEMT X-band frequency doublers with novel fundamental frequency reflector scheme
Chung, YK
Leong, KMKH
Itoh, T
[J]. IEICE TRANSACTIONS ON ELECTRONICS, 2003, E86C (08): : 1416 - 1421

← 1 2 3 4 5 →