A 1-Watt Ku-Band Power Amplifier in SiGe with 37.5% PAE

被引：0
|
作者：
Chen, Ying [1 ]
van der Heijden, Mark P. [1 ]
Leenaerts, Domine M. W. [1 ]
机构：
[1] NXP Semicond, NL-5656 AE Eindhoven, Netherlands
来源：
2016 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2016年
关键词：
PA; SiGe; Ku-band; PAE; power combine; TECHNOLOGY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper demonstrates a 1-Watt output power amplifier MMIC operating from 13.5GHz to 14.5GHz (Ku-band). The power amplifier employs an on-chip integrated 16-way in-phase output current combiner to achieve the required output power. Implemented in a 0.25-mu m SiGe:C BiCMOS technology, the power amplifier achieves a power-added efficiency of 37.5% at 14.1GHz with greater than 35.5% across the band of interest.
引用
收藏
页码：324 / 325
页数：2
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