A 12-W GaN-HEMT Power Amplifier for Ku-Band Satellite Communication

被引：5
|
作者：
Maassen, Daniel [1 ]
Rautschke, Felix [1 ]
Huellen, Thomas [3 ]
Boeck, Georg [1 ,2 ]
机构：
[1] Berlin Inst Technol, Microwave Engn Lab, Berlin, Germany
[2] Leibniz Inst Hoechstfrequenztech, Ferdinand Braun Inst FBH, Berlin, Germany
[3] GloMic GmbH, Berlin, Germany
来源：
2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON) | 2016年
关键词：
Digital video broadcasting; gallium nitride; HEMTs; microwave circuits; power amplifiers; satellite ground stations;
D O I：
10.1109/MIKON.2016.7492070
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes a hybrid microwave integrated circuit (MIC) power amplifier (PA) covering the extended Ku-band uplink (13.75 - 14.5 GHz) for satellite communication. A high relative permittivity alumina substrate and a 250nm GaN bare-die technology have been chosen realizing the amplifier. The designed PA was characterized in its small-and large-signal behavior. The measured device performance is about 12W output power for a continuous wave (CW) signal with a minimum drain efficiency of 31 %. Additional modulated measurements state an average output power of more than 9W and a peak power of about 18W achieving an efficiency of 25% using a 10 MSym/s QPSK signal.
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页数：4
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