MBE Growth and Transport Properties of MnGeP2 under Various P Pressure

被引：1
|
作者：
Choi, Jeongyong [1 ]
Hwang, Young-Hun [1 ]
Kim, Jae Hwi [1 ]
Cho, Sunglae [1 ]
Tsai, C-C [2 ]
机构：
[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[2] Chang Jung Christian Univ, Dept Engn & Management Adv Technol, Tainan 71101, Taiwan
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 55卷 / 06期
关键词：
MBE; Ferromagnetic semiconductor; ROOM-TEMPERATURE FERROMAGNETISM; MAGNETIC SEMICONDUCTORS;
D O I：
10.3938/jkps.55.2677
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have studied the magneto-transport properties of ferromagnetic MnGeP2 semiconductor thin films deposited on GaAs(100) by using molecular beam epitaxy (MBE) under diverse beam equivalent pressures (BEP) of phosphorus. The growth direction was along the c-axis of the film, whose surface was very rough. The temperature-dependent electrical resistance results strongly support the presence of a ferromagnetic phase transition in the chalcopyrite MnGeP2 thin film around 320 K. On the other hand, it shows all anisotropic magneto-resistance and an anomalous Hall effect in p-type MnGeP2 thin films, indicating the presence of spin-polarized hole carriers in MnGeP2. We have successfully observed magnetic domains at room temperature by using magnetic force microscopy (MFM).
引用
收藏
页码：2677 / 2680
页数：4
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