MBE Growth and Transport Properties of MnGeP2 under Various P Pressure

被引：1

作者：

Choi, Jeongyong ^{[1
]}

Hwang, Young-Hun ^{[1
]}

Kim, Jae Hwi ^{[1
]}

Cho, Sunglae ^{[1
]}

Tsai, C-C ^{[2
]}

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[2] Chang Jung Christian Univ, Dept Engn & Management Adv Technol, Tainan 71101, Taiwan

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 55卷 / 06期

关键词：

MBE; Ferromagnetic semiconductor; ROOM-TEMPERATURE FERROMAGNETISM; MAGNETIC SEMICONDUCTORS;

D O I：

10.3938/jkps.55.2677

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied the magneto-transport properties of ferromagnetic MnGeP2 semiconductor thin films deposited on GaAs(100) by using molecular beam epitaxy (MBE) under diverse beam equivalent pressures (BEP) of phosphorus. The growth direction was along the c-axis of the film, whose surface was very rough. The temperature-dependent electrical resistance results strongly support the presence of a ferromagnetic phase transition in the chalcopyrite MnGeP2 thin film around 320 K. On the other hand, it shows all anisotropic magneto-resistance and an anomalous Hall effect in p-type MnGeP2 thin films, indicating the presence of spin-polarized hole carriers in MnGeP2. We have successfully observed magnetic domains at room temperature by using magnetic force microscopy (MFM).

引用

页码：2677 / 2680

页数：4

共 50 条

[21] Transport Properties of Ni and PbTe Under Pressure
Jacobsen, Matthew K.
Kumar, Ravhi S.
Cornelius, Andrew L.
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (04) : 633 - 638
[22] GROWTH AND INTERFACIAL PROPERTIES OF GAAS, GAAS/AIAS ON VARIOUS ORIENTED SI SUBSTRATES BY MBE
LI, AZ
QIU, JH
WANG, JX
ZHOU, J
LIAO, BW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : C231 - C231
[23] Magnetic and transport properties of EuPt2Si2 under high pressure
Mitsuda, A
Goto, T
Takeshita, N
Môri, N
Wada, H
Shiga, M
[J]. ACTA PHYSICA POLONICA B, 2003, 34 (02): : 1149 - 1152
[24] ELECTRONIC TRANSPORT-PROPERTIES OF YBPD2GE2 UNDER PRESSURE
JIN, BJ
CHU, CW
GEBALLE, TH
WERNICK, JH
HULL, G
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 408 - 408
[25] Thermodynamic and transport properties of CeMg2Cu9 under pressure
Ito, M
Asada, K
Nakamori, Y
Hori, J
Fujii, H
Nakamura, F
Fujita, T
Suzuki, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2004, 73 (08) : 2252 - 2256
[26] Transport Properties of Heusler Compound Ru2-xFexCrSi under Pressure
Ito, Masakazu
Hisamatsu, Toru
Nakashima, Shingo
Shigeta, Iduru
Matsubayashi, Kazuyosi
Uwatoko, Yoshiya
Hiroi, Masahiko
[J]. 2ND INTERNATIONAL SYMPOSIUM ON ADVANCED MAGNETIC MATERIALS AND APPLICATIONS (ISAMMA 2010), 2011, 266
[27] Magnetic and Transport Properties of Filled Skutterudite SmOs4P12 under Pressure
Kawamura, Yukihiro
Kiyota, Yuya
Sekine, Chihiro
Wakeshima, Makoto
Matsuhira, Kazuyuki
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2012, 81
[28] Transport properties for carbon nanotubes under hydrostatic pressure
Chen, F
Xue, YY
Stokes, KL
Wang, H
Chu, CW
[J]. NANOTECH 2003, VOL 1, 2003, : 144 - 147
[29] Electrical transport properties of manganite powders under pressure
Rodriguez, M. G.
Leyva, A. G.
Acha, C.
[J]. PHYSICA B-CONDENSED MATTER, 2012, 407 (16) : 3137 - 3140
[30] Electrical Transport Properties of SnO under High Pressure
Zhang, Junkai
Han, Yonghao
Liu, Cailong
Ren, Wanbin
Li, Yan
Wang, Qinglin
Su, Ningning
Li, Yuqiang
Ma, Boheng
Ma, Yanzhang
Gao, Chunxiao
[J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (42): : 20710 - 20715

← 1 2 3 4 5 →