RHEED observation of the growth of chalcopyrite-type MnGeP2 on GaAs(001) substrate using Ge-buffer layer

被引：4

作者：

Minami, K ^{[1
]}

Jogo, J ^{[1
]}

Morishita, Y ^{[1
]}

Ishibashi, T ^{[1
]}

Sato, K ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Grad Sch Engn, Koganei, Tokyo 1848588, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

reflection high energy electron diffraction; molecular beam epitaxy; phosphides; magnetic materials;

D O I：

10.1016/j.jcrysgro.2004.12.085

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial growth of a novel chalcopyrite-type MnGeP2 has been investigated using an MBE technique. In order to improve the surface morphology of the films, an effect of introduction of a Ge buffer layer was investigated. This results in dramatic change of the RHEED pattern from spotty to streaky ones. Improvement of surface morphology was confirmed by SEM observation. We attribute the improvement to the crystallographic affinity of Ge with II-IV-V-2 compounds and atomically flat surface of the buffer layer. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：478 / 481

页数：4

共 46 条

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