MBE growth of a novel chalcopyrite-type ternary compound MnGeP2

Novel ternary Mn-containing compound MnGePz has been grown on GaAs and InP substrates using molecular beam epitaxy, in which Mn and Ge were supplied from solid sources and P from a gas source. The films obtained showed XRD pattern characteristic of MnGePz. Lattice constants were determined using reciprocal lattice mapping analysis. Films directly grown on GaAs substrate showed three-dimensional grain-growth. By introduction of a Ge buffer layer growth mode became two-dimensional. The magnetization vs. temperature curve showed ferromagnetic properties at room temperature, in conflict with theory which predicts its antiferromagnetism. Presence of secondary phase is discussed. (c) 2006 Elsevier Ltd. All rights reserved.