MBE growth of MnGeP2 thin films

被引：1
|
作者：
Minami, K. [1 ]
Smirnov, V. M. [1 ,2 ]
Yuasa, H. [1 ]
Jogo, J. [1 ]
Nagatsuka, T. [1 ]
Ishibashi, T. [1 ]
Sato, K. [1 ]
机构：
[1] Tokyo Univ Agr & Technol, Fac Technol, Koganei, Tokyo 1848588, Japan
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 275卷 / 1-2期
基金：
日本学术振兴会;
关键词：
Crystal structure; X-ray diffraction; Molecular beam epitaxy; Phosphides; Magnetic materials;
D O I：
10.1016/j.jcrysgro.2004.11.308
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Novel ternary compound MnGeP2 thin films have been prepared on InP(0 0 1) substrates by molecular beam epitaxy (MBE), in which Mn and Ge were supplied from solid sources using Knudsen cells and P-2 from a gas source by decomposing tertiary butyl phosphine (TBP). From an X-ray analysis the crystal structure was determined to be tetragonal with lattice constants a = 0.569 nm and c = 1.130 nm; with the c-axis perpendicular to the InP(0 0 1) plane. Optimal conditions to suppress GeP and MnP extraneous phases are discussed. (C) 2004 Elsevier B. V. All rights reserved.
引用
收藏
页码：E2225 / E2228
页数：4
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