Heteroepitaxial InP growth on a Si(001) substrate using a Ge buffer layer in MOCVD

被引：0
|
作者：
Shin, Keun Wook [1 ]
Lee, Sang-Moon [1 ,2 ]
Lee, Kiyoung [3 ]
Yoon, Euijoon [1 ]
机构：
[1] Seoul Natl Univ, Seoul, South Korea
[2] Samsung Elect, Seoul, South Korea
[3] Hongik Univ, Seoul, South Korea
来源：
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年
关键词：
Heteroepitaxy; InP and germanium; GAP;
D O I：
10.1109/EDTM55494.2023.10102975
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we grew InP heteroepitaxial layers on Si(001) substrates with Ge buffer layers. We found out that surface of InP layer was smoothened by adjusting Ge buffer layer. In addition, the suppression of planar defects in InP leaded to the improved crystallinity and optical properties, in spite of the increased threading dislocations. Our study suggested the possibility of combination of III-V and Ge for the future CMOS technologies.
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页数：3
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