Growth and transport properties under high pressure of PrOBiS2 single crystals

被引：5

作者：

Nagao, Masanori ^{[1
,3
]}

Miura, Akira ^{[2
]}

Matsumoto, Ryo ^{[3
]}

Maruyama, Yuki ^{[1
]}

Watauchi, Satoshi ^{[1
]}

Takano, Yoshihiko ^{[3
]}

Tadanaga, Kiyoharu ^{[2
]}

Tanaka, Isao ^{[1
]}

机构：

[1] Univ Yamanashi, 7-32 Miyamae, Kofu, Yamanashi 4008511, Japan

[2] Hokkaido Univ, Kita Ku, Kita 13 Nishi 8, Sapporo, Hokkaido 0608628, Japan

[3] Natl Inst Mat Sci, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan

来源：

SOLID STATE COMMUNICATIONS | 2019年 / 296卷

关键词：

Superconducting related materials; Single crystal growth; Valence state; Electrical resistivity under high pressure; SUPERCONDUCTIVITY; PR; DIAMOND; CE; ND;

D O I：

10.1016/j.ssc.2019.04.007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

PrOBiS2 single crystals were successfully grown using a KCl flux. The obtained crystals had a plate-like shape with a typical size of 0.5-1.0 mm and well-developed ab-plane. The Pr valence of the grown crystals, as determined by an X-ray absorption fine structure spectroscopy analysis, was almost trivalent. The PrOBiS2 single crystals did not exhibit superconductivity down to 0.25 K. The transport properties under high pressures up to 50 GPa ensured semiconducting behavior for 2-300 K using a diamond anvil cell.

引用

页码：17 / 20

页数：4

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