DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

被引：10
|
作者：
Moschetti, G. [1 ]
Nilsson, P-A [1 ]
Wadefalk, N. [1 ]
Malmkvist, M. [1 ]
Lefebvre, E. [1 ]
Grahn, J. [1 ]
Roelens, Y. [2 ]
Noudeviwa, A. [2 ]
Olivier, A. [2 ]
Bollaert, S. [2 ]
Danneville, F. [2 ]
Desplanque, L. [2 ]
Wallart, X. [2 ]
Dambrine, G. [2 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci MC2, Microwave Elect Lab, SE-41296 Gothenburg, Sweden
[2] Inst Elect Microelect & Nanotechnol, IEMN CNRS, UMR 8520, F-59652 Villeneuve Dascq, France
来源：
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) | 2009年
基金：
瑞典研究理事会;
关键词：
D O I：
10.1109/ICIPRM.2009.5012506
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The DC properties of 110-nm gate-length InAs/AlSb-based HEMTs at cryogenic (30K) and room temperature (300K) have been investigated. Compared to 300K, devices at 30 K exhibited lower on-resistance (R-ON) and output conductance (g(DS)) a higher transconductance (g(m)) and a more distinct knee in the I-DS(V-DS) characteristics. The improvement in the DC performance at cryogenic temperature should mainly be attributed to the lower source-drain resistance.
引用
收藏
页码：323 / +
页数：2
相关论文
共 50 条
  • [21] RF and DC characteristics of low-leakage InAs/AlSb HFETs
    Brar, B
    Nagy, G
    Bergman, J
    Sullivan, G
    Rowell, P
    Lin, HK
    Dahlstrom, M
    Kadow, C
    Rodwell, M
    IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, : 409 - 413
  • [22] DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures
    Zeng, Bolun
    Zhang, Haochen
    Luo, Chao
    Xiang, Zikun
    Zhang, Yuanke
    Wen, Mingjie
    Xue, Qiwen
    Hu, Sirui
    Sun, Yue
    Yang, Lei
    Sun, Haiding
    Guo, Guoping
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 55 (43)
  • [23] True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
    Moschetti, Giuseppe
    Abbasi, Morteza
    Nilsson, Per-Ake
    Hallen, Anders
    Desplanque, Ludovic
    Wallart, Xavier
    Grahn, Jan
    SOLID-STATE ELECTRONICS, 2013, 79 : 268 - 273
  • [24] Low-frequency noise in AlSb/InAs and related HEMTs
    Kruppa, Walter
    Boos, J. Brad
    Bennett, Brian R.
    Papanicolaou, Nicolas A.
    Park, Doewon
    Bass, Robert
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (05) : 1193 - 1202
  • [25] AlSb/InAs HEMTs with high transconductance and negligible kink effect
    Boos, JB
    Kruppa, W
    Park, D
    Molnar, B
    Bennett, BR
    ELECTRONICS LETTERS, 1996, 32 (07) : 688 - 689
  • [26] Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs
    Moschetti, Giuseppe
    Wadefalk, Niklas
    Nilsson, Per-Ake
    Abbasi, Morteza
    Desplanque, Ludovic
    Wallart, Xavier
    Grahn, Jan
    2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2012, : 373 - 376
  • [27] Planar InAs/AlSb HEMTs With Ion-Implanted Isolation
    Moschetti, Giuseppe
    Nilsson, Per-Ake
    Hallen, Anders
    Desplanque, Ludovic
    Wallart, Xavier
    Grahn, Jan
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (04) : 510 - 512
  • [28] DC AND MICROWAVE CHARACTERISTICS OF GAINP/GAAS HEMTS SUITABLE FOR CRYOGENIC OPERATION
    CHAN, YJ
    PAVLIDIS, D
    RAZEGHI, M
    OMNES, F
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 891 - 891
  • [29] InAlGaN/GaN HEMTs at Cryogenic Temperatures
    Dogmus, Ezgi
    Kabouche, Riad
    Lepilliet, Sylvie
    Linge, Astrid
    Zegaoui, Malek
    Ben-Ammar, Hichem
    Chauvat, Marie-Pierre
    Ruterana, Pierre
    Gamarra, Piero
    Lacam, Cedric
    Tordjman, Maurice
    Medjdoub, Farid
    ELECTRONICS, 2016, 5 (02)
  • [30] Low-voltage, high-speed AlSb/InAs HEMTs
    Boos, JB
    Kruppa, W
    Park, D
    Bennett, BR
    Bass, R
    Yang, MJ
    Shanabrook, BV
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 671 - 674
12345