Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs

被引：0
|
作者：
Moschetti, Giuseppe [1 ]
Wadefalk, Niklas [1 ]
Nilsson, Per-Ake [1 ]
Abbasi, Morteza [1 ]
Desplanque, Ludovic
Wallart, Xavier
Grahn, Jan [1 ]
机构：
[1] Chalmers, Dept Microtechnol & Nanosci MC2, SE-41296 Gothenburg, Sweden
来源：
2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年
关键词：
InAs/AlSb; high electron mobility transistor (HEMT); low noise; ultra-low power; Hybrid; LNA;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The suitability of InAs/AlSb HEMTs for cryogenic ultra low-power applications is investigated. Compared to room temperature, the device exhibited significantly improved drain current saturation, higher peak transconductance and lower gate current leakage at around 10 K. When tested in a three-stage hybrid 4-8 GHz LNA under cryogenic conditions, the LNA noise figure was 0.27 dB at an extremely low power consumption of 0.6 mW per stage.
引用
收藏
页码：373 / 376
页数：4
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