DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

被引：10
|
作者：
Moschetti, G. [1 ]
Nilsson, P-A [1 ]
Wadefalk, N. [1 ]
Malmkvist, M. [1 ]
Lefebvre, E. [1 ]
Grahn, J. [1 ]
Roelens, Y. [2 ]
Noudeviwa, A. [2 ]
Olivier, A. [2 ]
Bollaert, S. [2 ]
Danneville, F. [2 ]
Desplanque, L. [2 ]
Wallart, X. [2 ]
Dambrine, G. [2 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci MC2, Microwave Elect Lab, SE-41296 Gothenburg, Sweden
[2] Inst Elect Microelect & Nanotechnol, IEMN CNRS, UMR 8520, F-59652 Villeneuve Dascq, France
来源：
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) | 2009年
基金：
瑞典研究理事会;
关键词：
D O I：
10.1109/ICIPRM.2009.5012506
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The DC properties of 110-nm gate-length InAs/AlSb-based HEMTs at cryogenic (30K) and room temperature (300K) have been investigated. Compared to 300K, devices at 30 K exhibited lower on-resistance (R-ON) and output conductance (g(DS)) a higher transconductance (g(m)) and a more distinct knee in the I-DS(V-DS) characteristics. The improvement in the DC performance at cryogenic temperature should mainly be attributed to the lower source-drain resistance.
引用
收藏
页码：323 / +
页数：2
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