DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

被引：10
|
作者：
Moschetti, G. [1 ]
Nilsson, P-A [1 ]
Wadefalk, N. [1 ]
Malmkvist, M. [1 ]
Lefebvre, E. [1 ]
Grahn, J. [1 ]
Roelens, Y. [2 ]
Noudeviwa, A. [2 ]
Olivier, A. [2 ]
Bollaert, S. [2 ]
Danneville, F. [2 ]
Desplanque, L. [2 ]
Wallart, X. [2 ]
Dambrine, G. [2 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci MC2, Microwave Elect Lab, SE-41296 Gothenburg, Sweden
[2] Inst Elect Microelect & Nanotechnol, IEMN CNRS, UMR 8520, F-59652 Villeneuve Dascq, France
来源：
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) | 2009年
基金：
瑞典研究理事会;
关键词：
D O I：
10.1109/ICIPRM.2009.5012506
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The DC properties of 110-nm gate-length InAs/AlSb-based HEMTs at cryogenic (30K) and room temperature (300K) have been investigated. Compared to 300K, devices at 30 K exhibited lower on-resistance (R-ON) and output conductance (g(DS)) a higher transconductance (g(m)) and a more distinct knee in the I-DS(V-DS) characteristics. The improvement in the DC performance at cryogenic temperature should mainly be attributed to the lower source-drain resistance.
引用
收藏
页码：323 / +
页数：2
相关论文
共 50 条
  • [41] Development of InAs/AlSb HEMTs Using Pre-Passivated as-Grown Epitaxies
    Lin, Heng-Kuang
    He, Wei-Zhi
    Ho, Han-Chieh
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (10) : H1062 - H1067
  • [42] High Frequency Performance of Tellurium δ-Doped AlSb/InAs HEMTs at Low Power Supply
    Olivier, Aurelien
    Noudeviwa, Albert
    Wichmann, Nicolas
    Roelens, Yannick
    Desplanque, Ludovic
    Danneville, Francois
    Dambrine, Gilles
    Wallart, Xavier
    Bollaert, Sylvain
    2010 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2010, : 162 - 165
  • [43] Characterization of insulated-gate versus Schottky-gate InAs/AlSb HEMTs
    Malmkvist, Mikael
    Lefebvre, Eric
    Borg, Malin
    Desplanque, Ludovic
    Wallart, Xavier
    Dambrine, Gilles
    Bollaert, Sylvain
    Grahn, Jan
    2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2, 2007, : 536 - +
  • [44] AlSb/InAs HEMTs on InP substrate using wet and dry etching for mesa isolation
    Olivier, Aurelien
    Gehin, Thomas
    Desplanque, Ludovic
    Wallart, Xavier
    Roelens, Yannick
    Dambrine, Gilles
    Cappy, Alain
    Bollaert, Sylvain
    Lefebvre, Eric
    Malmkvist, Mikael
    Grahn, Jan
    2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 316 - +
  • [45] Degradation mechanisms of 0.1 μm AlSb/InAs HEMTs for ultralow-power applications
    Chou, Y. C.
    Yang, J. M.
    Lange, M. D.
    Tsui, S. S.
    Leung, D. L.
    Lin, C. H.
    Wojtowicz, M.
    Oki, A. K.
    2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, : 436 - +
  • [46] Low-frequency noise characteristics of AlSb/InAsSb HEMTs
    Kruppa, W
    Boos, JB
    Bennett, BR
    Tinkham, BP
    SOLID-STATE ELECTRONICS, 2004, 48 (10-11) : 2079 - 2084
  • [47] Dynamical conductance through InAs/GaSb/InAs and InAs/AlSb/GaSb/AlSb/InAs structures
    Ma, PW
    Wang, J
    PHYSICAL REVIEW B, 2004, 69 (12)
  • [48] Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain
    Borg, Malin
    Lefebvre, Eric
    Malmkvist, Mikael
    Desplanque, Ludovic
    Wallart, Xavier
    Roelens, Yannick
    Dambrine, Gilles
    Cappy, Alain
    Bollaert, Sylvain
    Grahn, Jan
    SOLID-STATE ELECTRONICS, 2008, 52 (05) : 775 - 781
  • [49] Reduction of gate current in AlSb/InAs HEMTs using a dual-gate design
    Boos, JB
    Kruppa, W
    Park, D
    ELECTRONICS LETTERS, 1996, 32 (17) : 1624 - 1625
  • [50] Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs
    Rodilla, H.
    Gonzalez, T.
    Moschetti, G.
    Grahn, J.
    Mateos, J.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (01)
12345