Microwave noise characteristics of AlSb/InAs HEMTs

被引：10

作者：

Kruppa, W ^{[1
]}

Boos, JB ^{[1
]}

Park, D ^{[1
]}

Bennett, BR ^{[1
]}

Bass, R ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 12期

关键词：

field effect transistors; Indium compounds; noise;

D O I：

10.1049/el:19970691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microwave noise characteristics of AlSb/InAs HEMTs are reported for the first time. Although the noise performance is presently limited by the gate leakage current, a minimum noise figure of 1dB at 4GHz was measured. Simulations based on these measurements indicate that very low noise performance is achievable at drain voltages < 0.5V.

引用

页码：1092 / 1093

页数：2

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