Low-frequency noise in AlSb/InAs and related HEMTs

被引：23
|
作者：
Kruppa, Walter [1 ]
Boos, J. Brad [1 ]
Bennett, Brian R. [1 ]
Papanicolaou, Nicolas A. [1 ]
Park, Doewon [1 ]
Bass, Robert [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 05期
关键词：
high-electron mobility transistors (HEMTs); indium compounds; microwave FETs; MODFETs; semiconductor device noise; semiconductor heterojunctions; 1 / f noise;
D O I：
10.1109/TED.2007.893658
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comprehensive examination of the low-frequency noise characteristics of AlSb/InAs and related high-electron mobility transistors (HEMTs) in the 6.1-angstrom-lattice-constant material system is reported. The effect of gate bias on the noise of devices in this technology is reported for the first time. The slope of the noise level in all the devices examined is nearly 1/f below 100 Hz, but, some have significant generation-recombination Lorentzian components at higher frequencies, with an activation energy between 0.30 and 0.40 eV. The Hooge parameter alpha(H) for open-channel measurements is in the range between 5 x 10(-4) and 5 x 10(-3) based on measurements at low drain voltage. Comparisons are made to the noise performance of several earlier InAs-based HEMTs with considerably different layer structure and channel composition.
引用
收藏
页码：1193 / 1202
页数：10
相关论文
共 50 条
  • [1] Low-frequency noise in AlSb/InAs HEMTs
    Kruppa, W
    Boos, JB
    Bennett, BR
    Yang, MJ
    ELECTRONICS LETTERS, 2000, 36 (22) : 1888 - 1889
  • [2] Low-frequency noise in AlSb/InAs and AlSb/InAsSb HEMTs
    Kruppa, W.
    Boos, J.B.
    Bennett, B.R.
    Yang, M.J.
    Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2000, : 569 - 572
  • [3] Low-frequency noise in AlSb/InAs and AlSb/InAsSb HEMTs
    Kruppa, W
    Boos, JB
    Bennett, BR
    Yang, MJ
    2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 569 - 572
  • [4] Low-frequency noise characteristics of AlSb/InAsSb HEMTs
    Kruppa, W
    Boos, JB
    Bennett, BR
    Tinkham, BP
    SOLID-STATE ELECTRONICS, 2004, 48 (10-11) : 2079 - 2084
  • [5] Microwave noise characteristics of AlSb/InAs HEMTs
    Kruppa, W
    Boos, JB
    Park, D
    Bennett, BR
    Bass, R
    ELECTRONICS LETTERS, 1997, 33 (12) : 1092 - 1093
  • [6] High Frequency Performance of Tellurium δ-Doped AlSb/InAs HEMTs at Low Power Supply
    Olivier, Aurelien
    Noudeviwa, Albert
    Wichmann, Nicolas
    Roelens, Yannick
    Desplanque, Ludovic
    Danneville, Francois
    Dambrine, Gilles
    Wallart, Xavier
    Bollaert, Sylvain
    2010 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2010, : 162 - 165
  • [7] Relaxation of low-frequency noise in AlGaN/GaN HEMTs
    Satka, A.
    Rendek, K.
    Priesol, J.
    NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 2012, : 199 - 202
  • [8] Low-frequency noise in AlSb/InAs high-electron-mobility transistor structure as a function of temperature and illumination
    Kruppa, W
    Yang, MJ
    Bennett, BR
    Boos, JB
    APPLIED PHYSICS LETTERS, 2004, 85 (05) : 774 - 776
  • [9] Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications
    Malmkvist, Mikael
    Lefebvre, Eric
    Borg, Malin
    Desplanque, Ludovic
    Wallart, Xavier
    Dambrine, Gilles
    Bollaert, Sylvain
    Grahn, Jan
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2008, 56 (12) : 2685 - 2691
  • [10] Low-Frequency Noise in Vertical InAs Nanowire FETs
    Persson, Karl-Magnus
    Lind, Erik
    Dey, Anil W.
    Thelander, Claes
    Sjoland, Henrik
    Wernersson, Lars-Erik
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (05) : 428 - 430
12345