Low-frequency noise in AlSb/InAs and related HEMTs

被引：23

作者：

Kruppa, Walter ^{[1
]}

Boos, J. Brad ^{[1
]}

Bennett, Brian R. ^{[1
]}

Papanicolaou, Nicolas A. ^{[1
]}

Park, Doewon ^{[1
]}

Bass, Robert ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 05期

关键词：

high-electron mobility transistors (HEMTs); indium compounds; microwave FETs; MODFETs; semiconductor device noise; semiconductor heterojunctions; 1 / f noise;

D O I：

10.1109/TED.2007.893658

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive examination of the low-frequency noise characteristics of AlSb/InAs and related high-electron mobility transistors (HEMTs) in the 6.1-angstrom-lattice-constant material system is reported. The effect of gate bias on the noise of devices in this technology is reported for the first time. The slope of the noise level in all the devices examined is nearly 1/f below 100 Hz, but, some have significant generation-recombination Lorentzian components at higher frequencies, with an activation energy between 0.30 and 0.40 eV. The Hooge parameter alpha(H) for open-channel measurements is in the range between 5 x 10(-4) and 5 x 10(-3) based on measurements at low drain voltage. Comparisons are made to the noise performance of several earlier InAs-based HEMTs with considerably different layer structure and channel composition.

引用

页码：1193 / 1202

页数：10

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