Microwave noise characteristics of AlSb/InAs HEMTs

被引：10
|
作者：
Kruppa, W [1 ]
Boos, JB [1 ]
Park, D [1 ]
Bennett, BR [1 ]
Bass, R [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 12期
关键词：
field effect transistors; Indium compounds; noise;
D O I：
10.1049/el:19970691
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The microwave noise characteristics of AlSb/InAs HEMTs are reported for the first time. Although the noise performance is presently limited by the gate leakage current, a minimum noise figure of 1dB at 4GHz was measured. Simulations based on these measurements indicate that very low noise performance is achievable at drain voltages < 0.5V.
引用
收藏
页码：1092 / 1093
页数：2
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