Fabrication of Novel Unipolar Nanodiodes in InAs/AlSb for Microwave Detection

被引：0
|
作者：
Zhang, L. Q. [1 ]
Alimi, Y. [1 ]
Balocco, C. [1 ]
Zhao, H.
Westlund, A.
Moschetti, G.
Nilsson, P-A
Grahn, J.
Song, A. M. [1 ]
机构：
[1] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England
来源：
2011 36TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2011年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the fabrication of unipolar nanodiodes into an InAs/AlxGa1-xSb quantum-well heterostructure for room temperature microwave detection up to 110 GHz. Electron-beam lithography was combined with both dry- and wet-etching, and we explored the differences in the electric and detection parameters with the two methods.
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