Fabrication of Novel Unipolar Nanodiodes in InAs/AlSb for Microwave Detection

被引：0

作者：

Zhang, L. Q. ^{[1
]}

Alimi, Y. ^{[1
]}

Balocco, C. ^{[1
]}

Zhao, H.

Westlund, A.

Moschetti, G.

Nilsson, P-A

Grahn, J.

Song, A. M. ^{[1
]}

机构：

[1] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England

来源：

2011 36TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication of unipolar nanodiodes into an InAs/AlxGa1-xSb quantum-well heterostructure for room temperature microwave detection up to 110 GHz. Electron-beam lithography was combined with both dry- and wet-etching, and we explored the differences in the electric and detection parameters with the two methods.

引用

页数：2

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