Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs

被引：0
|
作者：
Moschetti, Giuseppe [1 ]
Wadefalk, Niklas [1 ]
Nilsson, Per-Ake [1 ]
Abbasi, Morteza [1 ]
Desplanque, Ludovic
Wallart, Xavier
Grahn, Jan [1 ]
机构：
[1] Chalmers, Dept Microtechnol & Nanosci MC2, SE-41296 Gothenburg, Sweden
来源：
2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年
关键词：
InAs/AlSb; high electron mobility transistor (HEMT); low noise; ultra-low power; Hybrid; LNA;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The suitability of InAs/AlSb HEMTs for cryogenic ultra low-power applications is investigated. Compared to room temperature, the device exhibited significantly improved drain current saturation, higher peak transconductance and lower gate current leakage at around 10 K. When tested in a three-stage hybrid 4-8 GHz LNA under cryogenic conditions, the LNA noise figure was 0.27 dB at an extremely low power consumption of 0.6 mW per stage.
引用
收藏
页码：373 / 376
页数：4
相关论文
共 50 条
  • [41] An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier
    Hacker, JB
    Bergman, J
    Nagy, G
    Sullivan, G
    Kadow, C
    Lin, HK
    Gossard, AC
    Rodwell, M
    Brar, B
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2004, 14 (04) : 156 - 158
  • [42] An ultra-low power InAs/AlSb HEMT W-Band low-noise amplifier
    Hacker, JB
    Bergman, J
    Nagy, G
    Sullivan, G
    Kadow, C
    Lin, HK
    Gossard, AC
    Rodwell, M
    Brar, B
    2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4, 2005, : 1029 - 1032
  • [43] Ultra-low-power wideband high gain InAs/AlSb HEMT low-noise amplifiers
    Ma, Bob Yintat
    Hacker, Jonathan B.
    Bergman, Joshua
    Chen, Peter
    Sullivan, Gerard
    Nagy, Gabor
    Brar, B.
    2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, : 73 - +
  • [44] 0.1μm AlSb/InAs HEMTs with InAs subchannel
    Boos, JB
    Yang, MJ
    Bennett, BR
    Park, D
    Kruppa, W
    Yang, CH
    Bass, R
    ELECTRONICS LETTERS, 1998, 34 (15) : 1525 - 1526
  • [45] Low-power W-Band CPWG InAs/AlSb HEMT low-noise amplifier
    Riemer, PJ
    Buhrow, BR
    Hacker, JB
    Bergman, J
    Brar, B
    Gilbert, BK
    Daniel, ES
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (01) : 40 - 42
  • [46] 70-116-GHz LNAs in 35-nm and 50-nm Gate-Length Metamorphic HEMT Technologies for Cryogenic and Room-Temperature Operation
    Thome, Fabian
    Leuther, Arnulf
    Daniel Gallego, Juan
    Schaefer, Frank
    Schlechtweg, Michael
    Ambacher, Oliver
    2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS, 2018, : 1495 - 1498
  • [47] Cryogenic LNAs for SKA band 2 to 5
    Schleeh, J.
    Moschetti, G.
    Wadefalk, N.
    Cha, E.
    Pourkabirian, A.
    Alestig, G.
    Halonen, J.
    Nilsson, B.
    Nilsson, P. A.
    Grahn, J.
    2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2017, : 164 - 167
  • [48] Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks
    Triplett, G
    May, G
    Brown, A
    SOLID-STATE ELECTRONICS, 2002, 46 (10) : 1519 - 1524
  • [49] RESONANT TUNNELING IN ALSB/INAS/ALSB DOUBLE-BARRIER HETEROSTRUCTURES
    LUO, LF
    BERESFORD, R
    WANG, WI
    APPLIED PHYSICS LETTERS, 1988, 53 (23) : 2320 - 2322
  • [50] Low-frequency noise in AlSb/InAs and AlSb/InAsSb HEMTs
    Kruppa, W.
    Boos, J.B.
    Bennett, B.R.
    Yang, M.J.
    Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2000, : 569 - 572
12345