Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks

被引：12
|
作者：
Triplett, G [1 ]
May, G [1 ]
Brown, A [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 10期
关键词：
MBE; HEMT; neural networks; RHEED; interface;
D O I：
10.1016/S0038-1101(02)00098-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents experiments that examined the formation of the InAs/AlSb interface in high electron mobility transistor (HEMT) devices grown by molecular beam epitaxy (MBE). At the interface, indium barrier thickness and substrate temperature were varied. Reflection-high-energy-electron-diffraction (RHEED) intensity oscillations of the specular spot were recorded during formation of the interface. Electron mobility models based on growth conditions and RHEED data were developed using neural networks. Our results demonstrate a correlation of the electron mobility with growth conditions and RHEED data. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1519 / 1524
页数：6
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