RF and DC characteristics of low-leakage InAs/AlSb HFETs

被引：6

作者：

Brar, B ^{[1
]}

Nagy, G ^{[1
]}

Bergman, J ^{[1
]}

Sullivan, G ^{[1
]}

Rowell, P ^{[1
]}

Lin, HK ^{[1
]}

Dahlstrom, M ^{[1
]}

Kadow, C ^{[1
]}

Rodwell, M ^{[1
]}

机构：

[1] Rockwell Sci Co, Thousand Oaks, CA 91360 USA

来源：

IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/LECHPD.2002.1146781

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs/AlSb HFETs with excellent RF and DC properties are reported. The drain currents are 750mA/mm. with peak transconductance g(m) of 1.1 S/mm. The gate leakage in is below 1nA/mum(2) for low gate bias. The threshold voltages of 0.25 mum and 0.5 mum gate-length devices are -2.5 and -1.5 V respectively, indicating short channel effects are present. Small-signal measurements on a 0.25 gin gate-length device show f(tau) of 120 GHz and f(max) of 100 GHz at drain voltages below 0.4V.

引用

页码：409 / 413

页数：5

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