RF and DC characteristics of low-leakage InAs/AlSb HFETs

被引：6

作者：

Brar, B ^{[1
]}

Nagy, G ^{[1
]}

Bergman, J ^{[1
]}

Sullivan, G ^{[1
]}

Rowell, P ^{[1
]}

Lin, HK ^{[1
]}

Dahlstrom, M ^{[1
]}

Kadow, C ^{[1
]}

Rodwell, M ^{[1
]}

机构：

[1] Rockwell Sci Co, Thousand Oaks, CA 91360 USA

来源：

IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/LECHPD.2002.1146781

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs/AlSb HFETs with excellent RF and DC properties are reported. The drain currents are 750mA/mm. with peak transconductance g(m) of 1.1 S/mm. The gate leakage in is below 1nA/mum(2) for low gate bias. The threshold voltages of 0.25 mum and 0.5 mum gate-length devices are -2.5 and -1.5 V respectively, indicating short channel effects are present. Small-signal measurements on a 0.25 gin gate-length device show f(tau) of 120 GHz and f(max) of 100 GHz at drain voltages below 0.4V.

引用

页码：409 / 413

页数：5

共 50 条

[31] Sidegating-induced negative differential resistance in MBE-grown InAs/AlSb HFETs
Bolognesi, CR
Dvorak, MW
Chow, DH
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B): : 1789 - 1794
[32] DC, small-signal, and noise characteristics of 0.1 mu m AlSb/InAs HEMTs
Boos, JB
Kruppa, W
Park, D
Bennett, BR
Bass, R
1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 193 - 196
[33] DESIGN AND ANALYSIS OF INAS/ALSB BALLISTIC CONSTRICTIONS FOR HIGH-TEMPERATURE OPERATION AND LOW GATE LEAKAGE
KOESTER, SJ
BOLOGNESI, CR
HU, EL
KROEMER, H
ROOKS, MJ
SNIDER, GL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2528 - 2531
[34] Low-Leakage Secure Search for Boolean Expressions
Krell, Fernando
Ciocarlie, Gabriela
Gehani, Ashish
Raykova, Mariana
TOPICS IN CRYPTOLOGY - CT-RSA 2017, 2017, 10159 : 397 - 413
[35] LOW-LEAKAGE DYNAMIC SEAL-TO-SPACE
LESSLEY, RL
HODGSON, JN
MECHANICAL ENGINEERING, 1965, 87 (05) : 140 - &
[36] Low-leakage asymmetric-cell SRAM
Azizi, N
Moshovos, A
Najm, FN
ISLPED'02: PROCEEDINGS OF THE 2002 INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN, 2002, : 48 - 51
[37] Low-leakage pipelined instruction cache design
Sun, Hanxin
Wang, Xiaoyin
Tong, Dong
Cheng, Xu
Beijing Daxue Xuebao (Ziran Kexue Ban)/Acta Scientiarum Naturalium Universitatis Pekinensis, 2008, 44 (01): : 55 - 61
[38] EXPERIENCE WITH LOW-LEAKAGE FUEL-MANAGEMENT
SOUTHWORTH, FH
TRANSACTIONS OF THE AMERICAN NUCLEAR SOCIETY, 1984, 46 : 93 - 94
[39] Design Techniques and Architectures for Low-Leakage SRAMs
Calimera, Andrea
Macii, Alberto
Macii, Enrico
Poncino, Massimo
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2012, 59 (09) : 1992 - 2007
[40] Low-leakage asymmetric-cell SRAM
Azizi, N
Najm, FN
Moshovos, A
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2003, 11 (04) : 701 - 715

← 1 2 3 4 5 →