Threshold gate with hysteresis using neuron Mos

被引:0
|
作者
Nakahodo, Mototsune [1 ]
Yamada, Chikatoshi [2 ]
Nagata, Yasunori [1 ]
机构
[1] Univ Ryukyus, Dept Elect & Elect Engn, Senbaru 1 Nishihara, Okinawa, Japan
[2] Okinawa Natl Coll tech, Dept Info & Com Eng, Okinawa, Japan
关键词
asynchronous circuit; delay insensitive; neuron MOS; threshold gate;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
In this article threshold gates with hysteresis using neuron MOS (vMOS) are presented as basic elements in Null Convention Logic (NCL) circuits. NCL, which proposed by K. M. Fant and S. A. Branst, needs special gates having hysteresis, because NCL uses different ternary logic systems in computation phase and wiping phase of asynchronous behavior, respectively. To impliment the dinamic behavior, The traditional NCL circuits exploit extended CMOS structure which consists of a number of cascaded and parallel transistors connections. Then we improve the circuti with the characteristics of threshold function in vMOS, we designed hysteresial vMOS by means of feedback loop. This results the asynchronous circuits reducing the number of MOS and wire area. We provide two synthesis methods and simulation results of the gates and full-adder. The evaluation results of area dissipation and average delay show the advantages of the proposed circuitry.
引用
收藏
页码:159 / +
页数:3
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