Artificial Neuron using MoS2/Graphene Threshold Switching Memristors

被引：0
|
作者：
Kalita, Hirokjyoti [1 ]
Krishnaprasad, Adithi [1 ]
Choudhary, Nitin [1 ]
Das, Sonali [1 ]
Chung, Hee-Suk [2 ]
Jung, Yeonwoong [1 ]
Roy, Tania [1 ]
机构：
[1] Univ Cent Florida, 4000 Cent Florida Blvd, Orlando, FL 32826 USA
[2] Korea Basic Sci Inst, Jeonju 54907, South Korea
来源：
2018 76TH DEVICE RESEARCH CONFERENCE (DRC) | 2018年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：2
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