Design of multi-threshold threshold gate using MOS-NDR circuits suitable for CMOS process

被引：2
|
作者：
Gan, Kwang-Jow [1 ]
Huang, Chien-Hsiung [1 ]
Yeh, Wen-Kuan [2 ]
Guo, Chun-Yi [1 ]
Lu, Jeng-Jong [3 ]
机构：
[1] Natl Chiayi Univ, Dept Elect Engn, 300 Syuefu Rd, Chiayi 60004, Taiwan
[2] Natl Univ Kaohsiung, Dept Elect Engn, 700 Kaohsiung Univ Rd, Kaohsiung 81148, Taiwan
[3] Kun Shan Univ, Dept Mech Engn, 195 Kunda Rd, Tainan 71003, Taiwan
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2018年 / 96卷 / 03期
关键词：
Multi-threshold threshold gate; MOS-NDR circuit; Monostable-bistable logic element; CMOS technology; LOGIC FUNCTIONALITY; MEMORY;
D O I：
10.1007/s10470-018-1156-y
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
We demonstrate a multi-threshold threshold gate (MTTG) based on a series and parallel connection of several MOS-NDR circuits. A MOS-NDR circuit is made of five standard Si-based metal-oxide-semiconductor field-effect-transistor (MOS) devices. It can show the negative-differential-resistance (NDR) characteristic in its current-voltage (I-V) curve by adjusting suitable parameters for the MOS transistors. The operation principle of this MTTG is based on the monostable-bistable transition logic element (MOBILE), which the output voltage goes to the low or high state depending on the relative current-peak conditions of the series-connected NDR circuits by supplying a clocked voltage. The weight of this MTTG is defined by the gate width of the MOS device in the MOS-NDR circuit. It is different from the design using the area of the resonant tunneling diode as the weight in the other NDR-based MTTG circuit. A great advantage of this MOS-NDR-based MTTG is that we can design the application using the standard CMOS technology without the need of compound semiconductor.
引用
收藏
页码：409 / 416
页数：8
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