A neuron-MOS threshold element with switching capacitors

被引：0
|
作者：
Varshavsky, Victor
Marakhovsky, Vyacheslav
机构：
[1] Neural Networks Technol Ltd, IL-51264 Bnei Braq, Israel
[2] Univ Aizu, Hardware Dept, Aizu Wakamatsu 9658580, Japan
来源：
COMPUTATIONAL INTELLIGENCE: THEORY AND APPLICATIONS, PROCEEDINGS | 2001年 / 2206卷
关键词：
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
In the paper a new approach to building a vMOS threshold element and an artificial neuron on its base is discussed. The implementability of the known vMOS threshold elements is restricted by the sum of input weights. It is shown that by switching the element capacitors in the pre-charge phase it is possible to reduce the implementability restriction to the maximum value of the threshold. It essentially expands the set of threshold functions realizable on one element.
引用
收藏
页码：430 / 435
页数：6
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