DC characteristic simulation for floating gate neuron MOS circuits

被引：5
|
作者：
Ochiai, T [1 ]
Hatano, H [1 ]
机构：
[1] Shizuoka Inst Sci & Technol, Grad Sch Sci & Technol, Fukuroi City 4378555, Japan
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 18期
关键词：
D O I：
10.1049/el:19991023
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An original approach to DC characteristic SPICE simulation for floating gate neuron MOS circuits is demonstrated. A novel macromodel which calculates the floating gate potential by combining resistances and dependent voltage and current sources is introduced. Utilising this method, DC characteristics for neuron MOS circuits have been confirmed to be successfully simulated using SPICE.
引用
收藏
页码：1505 / 1507
页数：3
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