Real Chip Performance Evaluation on Through Chip Interface IP for Renesas SOTB 65nm Process

被引:1
|
作者
Kayashima, Hideto [1 ]
Kojima, Takuya [1 ]
Okuhara, Hayate [1 ]
Shidei, Tsunaaki [1 ]
Amano, Hideharu [1 ]
机构
[1] Keio Univ, Kohoku Ku, 3-14-1 Hiyoshi, Yokohama, Kanagawa, Japan
关键词
Through Chip Interface; SOTB (Silicon On Thin Buried Oxide); Building Block Computing System;
D O I
10.1109/CANDARW.2019.00054
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
The building block computing system can build various systems by connecting small-sized chips with inductive coupling wireless chip-to-chip connection TCI (Through Chip Interface). First, we have developed TCI IP by using the Renesas 65nm SOTB process and verified it with a simple TEG chip. Then several family chips have been developed with the IP; Geyser-TT (MIPS R3000 compatible processor), SNACC (neural network accelerator), CC-SOTB2 (improved CGRA), KVS (the accelerator for Key-Value-Store database), and SMTT (Shared Memory for Twin Tower). All of these chips worked alone without problems. However, when these chips were stacked to construct a system, problems were found on some combination of chips that TCI did not operate as designed. In order to investigate the cause of the trouble, we have developed a sophisticated tester chip called the TCI Tester. It provides three modes: RAW mode in which handshake lines can be directly controlled, CUBE mode in which the TCI Tester can write the data into the stacked target chips, and LOOP mode which allows continuous write and read operation for a long time working test. Through the evaluation by using a two-TCI Tester stacking system, the following appeared. (1) The maximum transfer frequency of the TCI IP is much lower than 50MHz which is the target value. Only 14MHz for the downward and 9MHz for the upward. (2) The performance of the upward transfer is lower than that of the downward. The poor upward data transfer performance comes from that the voltage drop on the power grid becomes large because of the location of the upward transmitter coil. We can improve it by increasing the number of power pads for the transmitter and enhancing the power grid. However, with the low transfer frequency, the TCI IP worked more than a day continuously.
引用
收藏
页码:269 / 274
页数:6
相关论文
共 50 条
  • [11] An on-chip metastability measurement circuit to characterize synchronization behavior in 65nm
    Beer, Salomon
    Ginosar, Ran
    Priel, Michael
    Dobkin, Rostislav
    Kolodny, Avinoam
    2011 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2011, : 2593 - 2596
  • [12] A Low Power AES-GCM Authenticated Encryption Core in 65nm SOTB CMOS Process
    Van-Phuc Hoang
    Van-Tinh Nguyen
    Anh-Thai Nguyen
    Pham, Cong-Kha
    2017 IEEE 60TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2017, : 112 - 115
  • [13] A 0.4THz Radiating On-chip Locked Source in 65nm CMOS
    Mustafa, Firass
    Socher, Eran
    2021 IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, ANTENNAS, COMMUNICATIONS AND ELECTRONIC SYSTEMS (COMCAS), 2021, : 181 - 184
  • [14] Chip package interaction for 65nm CMOS technology with C4 interconnections
    Farooq, Mukta
    Melville, Ian
    Muzzy, Christopher
    McLaughlin, Paul V.
    Hannon, Robert
    Sauter, Wolfgang
    Muncy, Jennifer
    Questad, David
    Carey, Charles
    Cullinan-Scholl, Mary
    McGahay, Vincent
    Angyal, Matthew
    Nye, Henry
    Lane, Michael
    Liu, Xiao Hu
    Shaw, Thomas
    Murray, Conal
    PROCEEDINGS OF THE IEEE 2007 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2007, : 196 - +
  • [15] Cross-coupling in 65nm Fully Integrated EDGE System On Chip Design and Cross-coupling prevention of complex 65nm SoC
    Bonnaud, Pierre-Henri
    Sommer, Grit
    DATE: 2009 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION, VOLS 1-3, 2009, : 1045 - +
  • [16] Low-K Flip Chip Board Level Reliability on 65nm Technology
    Tsao, Pei-Haw
    Kiang, Bill
    Wu, Kenneth
    Chang, Abel
    Yuan, Tsorng-Dih
    57TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, 2007 PROCEEDINGS, 2007, : 110 - +
  • [17] Improvement of interfacial adhesion in chip-package interaction of 65nm node SoC
    Kitsutaka, H
    Suzuki, K
    Inoto, H
    Kawakami, M
    Honda, K
    Hasunuma, M
    Ito, S
    Miyajima, H
    Fujita, K
    Kaneko, H
    Yoda, T
    Oyamatsu, H
    Yamada, S
    Matsuoka, F
    Noguchi, T
    ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004), 2004, : 265 - 268
  • [18] A low-swing signaling circuit technique for 65nm on-chip interconnects
    Venkatraman, Vishak
    Anders, Mark
    Kaul, Himanshu
    Burleson, Wayne
    Krishnamurthy, Ram
    IEEE INTERNATIONAL SOC CONFERENCE, PROCEEDINGS, 2006, : 289 - +
  • [19] 0.61THz Radiating Source with On-Chip Antenna on 65nm CMOS
    Khamaisi, Bassam
    Jameson, Samuel
    Socher, Eran
    2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2016, : 389 - 392
  • [20] Leveraging the geometric properties of on-chip transmission line structures to improve interconnect performance: A case study in 65nm
    Das, Shomit
    Manetas, Georgios
    Stevens, Kenneth S.
    Suaya, Roberto
    2013 SEVENTH IEEE/ACM INTERNATIONAL SYMPOSIUM ON NETWORKS-ON-CHIP (NOCS 2013), 2013,