Area-Efficient Read/Write Circuit for Spintronic Memristor Based Memories

被引：0
|
作者：
Nafea, Sherif F. [1 ]
Dessouki, Ahmed A. S. [2 ]
El-Rabaie, S. [3 ]
Elnaghi, Basem E. [1 ]
Ismail, Yehea [4 ,5 ]
Mostafa, Hassan [4 ,5 ,6 ]
机构：
[1] Suez Canal Univ, Fac Engn, Elect Engn Dept, Ismailia, Egypt
[2] Port Said Univ, Fac Engn, Elect Engn Dept, Port Said, Egypt
[3] Menoufia Univ, Fac Elect Engn, Elect & Elect Commun Dept, Menoufia, Egypt
[4] AUC, Ctr Nanoelect & Devices, New Cairo 11835, Egypt
[5] Zewail City Sci & Technol, New Cairo 11835, Egypt
[6] Cairo Univ, Elect & Commun Engn Dept, Giza, Egypt
来源：
2017 IEEE 60TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS) | 2017年
基金：
加拿大自然科学与工程研究理事会;
关键词：
Spintronic memristor; Read/Write Circuits; thermal fluctuations; memory design; read disturbance;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Memory circuits occupy substantial area percentage of recent. In addition, the continuous scaling of CMOS technology faces increasing technological difficulties. Thus, there is a need for alternative technologies that can offer larger memory densities and better performance. Spintronic memristor offers a good alternative for memory design due to its inherent non-volatility, good scalability, and radiation hardness. In this paper, a read/write circuit for spintronic memristor-based memories is proposed. The proposed read/write circuit achieves a significant reduction in the occupied area. The read disturbance of the circuit is investigated to calculate the maximum allowed number of reading cycles before a refreshment operation is needed.
引用
收藏
页码：1544 / 1547
页数：4
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