Area-Efficient Read/Write Circuit for Spintronic Memristor Based Memories

被引：0

作者：

Nafea, Sherif F. ^{[1
]}

Dessouki, Ahmed A. S. ^{[2
]}

El-Rabaie, S. ^{[3
]}

Elnaghi, Basem E. ^{[1
]}

Ismail, Yehea ^{[4
,5
]}

Mostafa, Hassan ^{[4
,5
,6
]}

机构：

[1] Suez Canal Univ, Fac Engn, Elect Engn Dept, Ismailia, Egypt

[2] Port Said Univ, Fac Engn, Elect Engn Dept, Port Said, Egypt

[3] Menoufia Univ, Fac Elect Engn, Elect & Elect Commun Dept, Menoufia, Egypt

[4] AUC, Ctr Nanoelect & Devices, New Cairo 11835, Egypt

[5] Zewail City Sci & Technol, New Cairo 11835, Egypt

[6] Cairo Univ, Elect & Commun Engn Dept, Giza, Egypt

来源：

2017 IEEE 60TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS) | 2017年

基金：

加拿大自然科学与工程研究理事会;

关键词：

Spintronic memristor; Read/Write Circuits; thermal fluctuations; memory design; read disturbance;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Memory circuits occupy substantial area percentage of recent. In addition, the continuous scaling of CMOS technology faces increasing technological difficulties. Thus, there is a need for alternative technologies that can offer larger memory densities and better performance. Spintronic memristor offers a good alternative for memory design due to its inherent non-volatility, good scalability, and radiation hardness. In this paper, a read/write circuit for spintronic memristor-based memories is proposed. The proposed read/write circuit achieves a significant reduction in the occupied area. The read disturbance of the circuit is investigated to calculate the maximum allowed number of reading cycles before a refreshment operation is needed.

引用

页码：1544 / 1547

页数：4

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