High density DRAM for space utilizing embedded DRAMs macros in 32nm SOI CMOS

被引：0
|
作者：
Popp, Jeremy [1 ]
Ballast, John [1 ]
Rabaa, Salim [1 ]
McKay, Tony [1 ]
Braatz, Jim [1 ]
机构：
[1] Boeing Res & Technol, Bellevue, WA USA
来源：
2011 IEEE INTERNATIONAL SOI CONFERENCE | 2011年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：22
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