Present and Future Non-Volatile Memories for Space

被引：148

作者：

Gerardin, Simone ^{[1
,2
]}

Paccagnella, Alessandro ^{[1
,2
]}

机构：

[1] Univ Padua, Dipartimento Ingn Informaz, RREACT Grp, I-35100 Padua, Italy

[2] Ist Nazl Fis Nucl, Sez Padova, Padua, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 06期

关键词：

Ferroelectric devices; flash memory; magnetoresistive devices; nonvolatile memory; phase change memory; radiation effects; RANDOM-ACCESS MEMORY; SINGLE-EVENT UPSET; DOSE RADIATION RESPONSE; HEAVY-ION EXPOSURE; FLASH MEMORY; CHARGE LOSS; IONIZING-RADIATION; RETENTION CHARACTERISTICS; THIN-FILMS; NAND;

D O I：

10.1109/TNS.2010.2084101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss non-volatile memories (NVM) for space applications. The focus will be both on technologies and devices aimed at the mainstream commercial markets and on rad-hard devices. Commercial NVMs are very attractive for space designers due to their large size (tens of Gbits), even though they have several issues related to ionizing radiation. Rad-hard NVMs offer radiation hardness, but are available only in small size (few Mbits). Most of the emphasis in this review paper will be on the current dominant technology in the mainstream market: floating gate flash memories. A comprehensive discussion of total dose and single event effects results for a wide cross section of NVMs will be presented. Finally, we will conclude with a cursory glance at other emerging non-volatile technologies.

引用

页码：3016 / 3039

页数：24

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