SEE and TID of emerging non-volatile memories

被引：0
|
作者：
Nguyen, DN [1 ]
Scheick, LZ [1 ]
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91125 USA
来源：
2002 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the SEE and TID tests of higher density flash memories. Stand-by currents and functionality tests were used to characterize the response of radiation effects. Single Event Functional Interrupt (SEFI) errors were observed indicating upsets from complex control circuitry.
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页码：62 / 66
页数：5
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