Ge-based non-volatile memories

被引:3
|
作者
Wei, Na [1 ]
Zhang, Yi [1 ]
Chen, Bing [1 ]
Zhao, Yi [1 ]
机构
[1] Zhejiang Univ, Coll Informat Sci & Elect Engn, 38 Zheda Rd, Hangzhou 310027, Peoples R China
关键词
RRAM; DEVICES; ARRAYS;
D O I
10.35848/1347-4065/ab8e20
中图分类号
O59 [应用物理学];
学科分类号
摘要
With the emerging of Internet of Things, low power memories with the fair performance are attracting more and more attention in both industry and academia. Specially, novel non-volatile memory technology plays the key role in chips pursuing a tradeoff among area, energy, storage and speed. Recently, lots of reports focus on a new non-volatile device technology which is named memdiode (MD) using germanium material. In this paper, we will review the concept of MD and its applications in conventional non-volatile resistive switching memory devices, ternary content addressable memory, and NAND-like flash memory devices. (C) 2020 The Japan Society of Applied Physics
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页数:6
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