Switching dynamics in non-volatile polymer memories

被引：11

作者：

Verbakel, Frank ^{[1
,2
]}

Meskers, Stefan C. J. ^{[1
,2
]}

Janssen, Rene A. J. ^{[1
,2
]}

Gomes, Henrique L. ^{[3
]}

van den Biggelaar, Antonius J. M. ^{[4
]}

de Leeuw, Dago M. ^{[4
]}

机构：

[1] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands

[2] Netherlands & Dutch Polymer Inst DPI, NL-5600 AX Eindhoven, Netherlands

[3] Univ Algarve, CEOT, P-8000 Faro, Portugal

[4] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

来源：

ORGANIC ELECTRONICS | 2008年 / 9卷 / 05期

关键词：

organic memory; resistive switching; polymer diode;

D O I：

10.1016/j.orgel.2008.05.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The time dependence of resistive switching in metal-metal oxide-organic semiconductormetal diodes is investigated. The switching dynamics is controlled by two intrinsic time dependences. A single switching event occurs in a time scale of 400 nanoseconds. but the maximum repetitive switching between ON- and OFF-states is limited by a "dead time" of a few milliseconds. The dead time is the waiting time after programming in which a next switch is inhibited. Therefore, fast repetitive pulsing prevents the observation of non-volatile switching and limits the maximum clock rate at which these memories can be used. Understanding the origin of this dead time is crucial to future memory applications. Furthermore. the occurrence of a dead time is possibly the origin of the huge variation in the reported switching times. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：829 / 833

页数：5

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