Low power, high reliability magnetic flip-flop

被引：21
|
作者：
Lakys, Y. [1 ]
Zhao, W. S. [1 ]
Klein, J. -O. [1 ]
Chappert, C. [1 ]
机构：
[1] Univ Paris Sud, UMR8622, IEF, F-91405 Orsay, France
来源：
ELECTRONICS LETTERS | 2010年 / 46卷 / 22期
关键词：
D O I：
10.1049/el.2010.2039
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new design of a non-volatile magnetic flip-flop is presented. The use of a magnetic tunnel junction (MTJ) to store the information brings non-volatility to logic circuits and promises zero standby power. It is based on the thermally assisted switching (TAS) approach and the pre-charge sense amplifier. By using STMicroelectronics' CMOS 0.13um design kit and a precise TAS-MTJ compact model, transient functional simulations and Monte Carlo statistical analysis have been carried out to show, respectively, its low power and high reliability performances.
引用
收藏
页码：1493 / U31
页数：2
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