Low power, high reliability magnetic flip-flop

被引：21

作者：

Lakys, Y. ^{[1
]}

Zhao, W. S. ^{[1
]}

Klein, J. -O. ^{[1
]}

Chappert, C. ^{[1
]}

机构：

[1] Univ Paris Sud, UMR8622, IEF, F-91405 Orsay, France

来源：

ELECTRONICS LETTERS | 2010年 / 46卷 / 22期

关键词：

D O I：

10.1049/el.2010.2039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new design of a non-volatile magnetic flip-flop is presented. The use of a magnetic tunnel junction (MTJ) to store the information brings non-volatility to logic circuits and promises zero standby power. It is based on the thermally assisted switching (TAS) approach and the pre-charge sense amplifier. By using STMicroelectronics' CMOS 0.13um design kit and a precise TAS-MTJ compact model, transient functional simulations and Monte Carlo statistical analysis have been carried out to show, respectively, its low power and high reliability performances.

引用

页码：1493 / U31

页数：2

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