Performance of Stacked Nanosheets Gate-All-Around and Multi-Gate Thin-Film-Transistors

被引：16
|
作者：
Lin, Yu-Ru [1 ]
Yang, Yi-Yun [1 ]
Lin, Yu-Hsien [2 ]
Kurniawan, Erry Dwi [1 ,3 ,4 ]
Yeh, Mu-Shin [5 ]
Chen, Lun-Chun [1 ,6 ]
Wu, Yung-Chun [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan
[2] Natl United Univ, Dept Elect Engn, Miaoli 36003, Taiwan
[3] Acad Sinica, Taiwan Int Grad Program, Nano Sci & Technol Program, Hsinchu 300, Taiwan
[4] Natl Tsing Hua Univ, Hsinchu 300, Taiwan
[5] Natl Appl Res Labs, Natl Nano Device Labs, Hsinchu 300, Taiwan
[6] eMemory Technol Inc, Business Grp 1, Prod Div 2, Hsinchu 30265, Taiwan
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2018年 / 6卷 / 01期
关键词：
Thin-film transistor (TFT); gate-all-around (GAA); Nanosheet (NS); stacked structure;
D O I：
10.1109/JEDS.2018.2873008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This comprehensive study of the horizontally p-type stacked nanosheets inversion mode thin-film transistor with gate-all-around (SNS-GAATFT) and multi-gate (SNS- EFT) structures. The stacked nanosheets device structure, fabrication, and electrical characteristics are analyzed. The SNS-GAATFT reveals better performance to multi-gate SNS-TFT. The proposed inversion mode SNS-TFT has properties of the easy process with low cost and compatible with all 3-D Si CMOS and AMOLED applications. Moreover, the SNS-GAAEFT is suitable for future monolithic 3-D IC for 2015's ITRS technology roadmap for the year 2024-2030.
引用
收藏
页码：1187 / 1191
页数：5
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