Rapid Thermal Treatment for Improving Thermal Processing Stability of Ar-Implanted Surface Passivated High-Resistivity Silicon

被引：1
|
作者：
Liu, Chih-Yi [1 ]
Weng, Min-Hang [2 ]
Lin, Jyun-Min [1 ]
机构：
[1] Natl Kaohsiung Univ Appl Sci, Dept Elect Engn, Kaohsiung 807, Taiwan
[2] Met Ind Res & Dev Ctr, Kaohsiung 821, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2011年 / 21卷 / 07期
关键词：
Coplanar waveguide (CPW); microwave loss; surface passivation; thermal processing stability; thermally-induced electrical instability; SRTIO3;
D O I：
10.1109/LMWC.2011.2151850
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study improved the thermal processing stability of Si-based coplanar waveguides (CPW) through Ar ion implantation with rapid thermal annealing (RTA). Ar ion implantation damaged the surface layer of the high-resistivity silicon substrate, which decreased attenuation of the CPW line. However, the damaged layer recrystallized during a high temperature process, which caused thermal processing instability. A RTA process was performed to retard the epitaxial regrowth from the substrate, this improved thermal processing stability and decreased dc-voltage dependence of the attenuation of the CPW line. These improved properties were found to be due to the RTA process retaining more bulk traps within the damaged layer.
引用
收藏
页码：365 / 367
页数：3
相关论文
共 50 条
  • [1] Surface-passivated high-resistivity silicon substrates for RFICs
    Rong, B
    Burghartz, JN
    Nanver, LK
    Rejaei, B
    van der Zwan, M
    [J]. IEEE ELECTRON DEVICE LETTERS, 2004, 25 (04) : 176 - 178
  • [2] Surface-passivated high-resistivity silicon as a true microwave substrate
    Spirito, M
    De Paola, FM
    Nanver, LK
    Valletta, E
    Rong, BF
    Rejaei, B
    de Vreede, LCN
    Burghartz, JN
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (07) : 2340 - 2347
  • [3] Effect of rapid thermal treatment on photoluminescence of surface passivated porous silicon
    Zhao, Yue
    Li, Dongsheng
    Xing, Shuoxiang
    Sang, Wenbin
    Yang, Deren
    Jiang, Minhua
    [J]. JOURNAL OF LUMINESCENCE, 2008, 128 (03) : 317 - 320
  • [4] Influence of rapid thermal processing on carrier concentration in high resistivity silicon
    Capello, Luciana
    Bertrand, Isabelle
    Kononchuk, Oleg
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (07):
  • [5] THERMAL DEFECTS IN HIGH-RESISTIVITY DISLOCATION-FREE SILICON
    VORONKOV, VV
    VORONKOVA, GI
    GOLOVINA, VN
    KLIMANOV, EA
    FAMITSKII, VI
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (05): : 572 - 574
  • [6] Investigation of the dynamics of recrystallization and melting of the surface of implanted silicon at rapid thermal processing
    Fattakhov, YV
    Galyautdinov, MF
    L'vova, TN
    Zakharov, MV
    Khaibullin, IB
    [J]. MICRO- AND NANOELECTRONICS 2003, 2004, 5401 : 104 - 109
  • [7] Nanocrystalline silicon thickness dependence of transmission characteristics of CPWs on surface-passivated high-resistivity silicon substrates
    Wang, R. -L.
    Su, Y. -K.
    Chen, C. -J.
    Hsueh, T. -J.
    [J]. ELECTRONICS LETTERS, 2011, 47 (20) : 1133 - U124
  • [8] On thermal activation of interface-generated currents in high-resistivity silicon devices
    Ruzin, A
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 512 (1-2): : 8 - 20
  • [9] Investigation of structural-phase transitions dynamics on the surface of implanted silicon at rapid thermal processing
    Fattakhov, Ya. V.
    Galyautdinov, M. F.
    L'vova, T. N.
    Zakharov, M. V.
    Khaibullin, I. B.
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 : 222 - 226
  • [10] DEEP LEVELS OF THERMAL DEFECTS IN HIGH-RESISTIVITY ULTRAPURE N-TYPE SILICON
    VERBITSKAYA, EM
    EREMIN, VK
    IVANOV, AM
    STROKAN, NB
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (11): : 1101 - 1106
12345