Rapid Thermal Treatment for Improving Thermal Processing Stability of Ar-Implanted Surface Passivated High-Resistivity Silicon

被引：1

作者：

Liu, Chih-Yi ^{[1
]}

Weng, Min-Hang ^{[2
]}

Lin, Jyun-Min ^{[1
]}

机构：

[1] Natl Kaohsiung Univ Appl Sci, Dept Elect Engn, Kaohsiung 807, Taiwan

[2] Met Ind Res & Dev Ctr, Kaohsiung 821, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2011年 / 21卷 / 07期

关键词：

Coplanar waveguide (CPW); microwave loss; surface passivation; thermal processing stability; thermally-induced electrical instability; SRTIO3;

D O I：

10.1109/LMWC.2011.2151850

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study improved the thermal processing stability of Si-based coplanar waveguides (CPW) through Ar ion implantation with rapid thermal annealing (RTA). Ar ion implantation damaged the surface layer of the high-resistivity silicon substrate, which decreased attenuation of the CPW line. However, the damaged layer recrystallized during a high temperature process, which caused thermal processing instability. A RTA process was performed to retard the epitaxial regrowth from the substrate, this improved thermal processing stability and decreased dc-voltage dependence of the attenuation of the CPW line. These improved properties were found to be due to the RTA process retaining more bulk traps within the damaged layer.

引用

页码：365 / 367

页数：3

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